Electrical and Structural Properties of Amorphous Silicon Carbide and Its Application for Photovoltaic Heterostructures

Authors

  • Milan Perný
  • Vladimír Šály
  • Michal Váry
  • Jozef Huran

Keywords:

Silicone Carbide, IV characteristic, IR spectroscopy

Abstract

Amorphous silicon carbide/nitride (a – SiC(N)) films were prepared by PECVD technology in capacitive parallel plate plasma reactor. A gas mixture of SiH4, CH4 and NH3 was directly introduced into the reaction chamber through a shower head. Properties of thus produced films were studied by electrical measurement. Forward (FW) and reverse (RW) current-voltage (IV) characteristics (Al – SiC(N)/Si–Al structures) are shown in this paper. Calculated and measured parameter as refractivity index, thickness, factor ideality, saturation current are included in this work. Identification of bonds at surface of amorphous layers by FTIR was presented.

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Published

2011-10-14

Issue

Vol. 4 No. 3 (2011)

Section

Generation of Electricity, Transmission, Distribution and Consumption of Electricity

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